на замовлення 2999 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 30.65 грн |
| 100+ | 23.83 грн |
| 3000+ | 4.35 грн |
| 9000+ | 3.51 грн |
| 24000+ | 3.44 грн |
| 45000+ | 3.13 грн |
Відгуки про товар
Написати відгук
Технічний опис NSVMSA1162GT1G onsemi
Description: TRANS PNP 45V BIPOLAR SC59-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 2µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: SC-59, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Qualification: AEC-Q101.
Інші пропозиції NSVMSA1162GT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
NSVMSA1162GT1G | Виробник : ON Semiconductor |
 Bipolar Transistors - BJT SS SC59 XSTR PNP 45V TR |
товару немає в наявності |
|
 |
NSVMSA1162GT1G | Виробник : onsemi |
Description: TRANS PNP 45V BIPOLAR SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-59 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Qualification: AEC-Q101 |
товару немає в наявності |
|
|
|
NSVMSA1162GT1G | Виробник : onsemi |
Description: TRANS PNP 45V BIPOLAR SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-59 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Qualification: AEC-Q101 |
товару немає в наявності |
|
| NSVMSA1162GT1G | Виробник : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SC59 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59 Current gain: 120...240 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Application: automotive industry |
товару немає в наявності |