NSVMUN5312DW1T2G onsemi
Виробник: onsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1263 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 19.00 грн |
| 29+ | 10.98 грн |
| 100+ | 6.87 грн |
| 500+ | 4.73 грн |
| 1000+ | 4.18 грн |
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Технічний опис NSVMUN5312DW1T2G onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NSVMUN5312DW1T2G за ціною від 2.83 грн до 20.67 грн
| Фото | Назва | Виробник | Інформація |
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| NSVMUN5312DW1T2G | Виробник : onsemi |
Digital Transistors SS SC88 BR XSTR DUAL 50V |
на замовлення 2974 шт: термін постачання 21-30 дні (днів) |
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NSVMUN5312DW1T2G | Виробник : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R |
товару немає в наявності |
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NSVMUN5312DW1T2G | Виробник : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| NSVMUN5312DW1T2G | Виробник : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 60...100 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ |
товару немає в наявності |