NTB011N15MC onsemi
Виробник: onsemi
Description: NTB011N15MC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 75.4A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 41A, 10V
Power Dissipation (Max): 3.75W (Ta), 136.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 223µA
Supplier Device Package: D²PAK-3 (TO-263-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 75 V
Description: NTB011N15MC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 75.4A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 41A, 10V
Power Dissipation (Max): 3.75W (Ta), 136.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 223µA
Supplier Device Package: D²PAK-3 (TO-263-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 75 V
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 293.89 грн |
10+ | 254.29 грн |
25+ | 240.41 грн |
100+ | 185.51 грн |
250+ | 166.45 грн |
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Технічний опис NTB011N15MC onsemi
Description: NTB011N15MC, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 75.4A (Tc), Rds On (Max) @ Id, Vgs: 10.9mOhm @ 41A, 10V, Power Dissipation (Max): 3.75W (Ta), 136.4W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 223µA, Supplier Device Package: D²PAK-3 (TO-263-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 75 V.
Інші пропозиції NTB011N15MC за ціною від 136.17 грн до 323.94 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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NTB011N15MC | Виробник : onsemi | MOSFET PTNG 150V N-FET D2PAK |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
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NTB011N15MC | Виробник : onsemi |
Description: NTB011N15MC Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 75.4A (Tc) Rds On (Max) @ Id, Vgs: 10.9mOhm @ 41A, 10V Power Dissipation (Max): 3.75W (Ta), 136.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 223µA Supplier Device Package: D²PAK-3 (TO-263-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 75 V |
товар відсутній |