NTB75N03RT4G onsemi

Description: MOSFET N-CH 25V 9.7A/75A D2PAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: D2PAK.