NTBG022N120M3S ON Semiconductor

Description: SIC MOSFET 1200 V 22 MOHM M3S SE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V, Power Dissipation (Max): 234W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 20mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V.