NTBG040N120M3S onsemi
Виробник: onsemiDescription: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 731.97 грн |
| 10+ | 486.60 грн |
| 100+ | 403.55 грн |
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Технічний опис NTBG040N120M3S onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 10mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V.
Інші пропозиції NTBG040N120M3S за ціною від 356.68 грн до 749.20 грн
| Фото | Назва | Виробник | Інформація |
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NTBG040N120M3S | Виробник : onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 40MOHM 1200V M3 |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
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| NTBG040N120M3S | Виробник : ON Semiconductor |
Silicon Carbide (SiC) MOSFET |
товару немає в наявності |
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| NTBG040N120M3S | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 40A Pulsed drain current: 149A Power dissipation: 131W Case: D2PAK-7 Gate-source voltage: -10...22V On-state resistance: 80mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal кількість в упаковці: 800 шт |
товару немає в наявності |
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NTBG040N120M3S | Виробник : onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V |
товару немає в наявності |
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| NTBG040N120M3S | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 40A Pulsed drain current: 149A Power dissipation: 131W Case: D2PAK-7 Gate-source voltage: -10...22V On-state resistance: 80mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |