NTBGS002N06C onsemi
Виробник: onsemi
MOSFET Power MOSFET, 60 V, 2.2 m?, 211 A, Single N-Channel, D2PAK7 Power MOSFET, 60 V, 2.0 m?, 252 A, Single N-Channel, D2PAK7
| Кількість | Ціна |
|---|---|
| 1+ | 720.16 грн |
| 10+ | 623.94 грн |
| 25+ | 519.52 грн |
| 100+ | 453.18 грн |
| 250+ | 440.61 грн |
| 500+ | 420.36 грн |
| 800+ | 355.42 грн |
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Технічний опис NTBGS002N06C onsemi
Description: POWER MOSFET, 60 V, 2.2 M?, 211, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V, Power Dissipation (Max): 3.7W (Ta), 178W (Tc), Vgs(th) (Max) @ Id: 4V @ 225µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V.
Інші пропозиції NTBGS002N06C
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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NTBGS002N06C | onsemi |
Description: POWER MOSFET, 60 V, 2.2 M?, 211 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V Power Dissipation (Max): 3.7W (Ta), 178W (Tc) Vgs(th) (Max) @ Id: 4V @ 225µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
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NTBGS002N06C | onsemi |
Description: POWER MOSFET, 60 V, 2.2 M?, 211 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V Power Dissipation (Max): 3.7W (Ta), 178W (Tc) Vgs(th) (Max) @ Id: 4V @ 225µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. |
| NTBGS002N06C |
|
Виробник: onsemi
Description: POWER MOSFET, 60 V, 2.2 M?, 211
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V
Power Dissipation (Max): 3.7W (Ta), 178W (Tc)
Vgs(th) (Max) @ Id: 4V @ 225µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V
Description: POWER MOSFET, 60 V, 2.2 M?, 211
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V
Power Dissipation (Max): 3.7W (Ta), 178W (Tc)
Vgs(th) (Max) @ Id: 4V @ 225µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NTBGS002N06C |
|
Виробник: onsemi
Description: POWER MOSFET, 60 V, 2.2 M?, 211
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V
Power Dissipation (Max): 3.7W (Ta), 178W (Tc)
Vgs(th) (Max) @ Id: 4V @ 225µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V
Description: POWER MOSFET, 60 V, 2.2 M?, 211
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V
Power Dissipation (Max): 3.7W (Ta), 178W (Tc)
Vgs(th) (Max) @ Id: 4V @ 225µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.