NTBGS002N06C ON Semiconductor

Description: POWER MOSFET, 60 V, 2.2 M?, 211, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V, Power Dissipation (Max): 3.7W (Ta), 178W (Tc), Vgs(th) (Max) @ Id: 4V @ 225µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V.