| Кількість | Ціна |
|---|---|
| 2+ | 316.09 грн |
| 10+ | 261.78 грн |
| 100+ | 183.65 грн |
| 800+ | 136.16 грн |
| 2400+ | 129.18 грн |
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Технічний опис NTBGS3D5N06C onsemi
Description: POWER MOSFET, 60 V, 3.7 M?, 127A, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 127A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 24A, 12V, Power Dissipation (Max): 3.7W (Ta), 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 122µA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 30 V.
Інші пропозиції NTBGS3D5N06C за ціною від 238.28 грн до 336.22 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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NTBGS3D5N06C | onsemi |
 Description: POWER MOSFET, 60 V, 3.7 M?, 127APackaging: Cut Tape (CT) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 127A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 24A, 12V Power Dissipation (Max): 3.7W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 122µA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 30 V |
на замовлення 142 шт: термін постачання 21-31 дні (днів) |
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| NTBGS3D5N06C |
|
Виробник: onsemi
Description: POWER MOSFET, 60 V, 3.7 M?, 127A
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 24A, 12V
Power Dissipation (Max): 3.7W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 122µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 30 V
Description: POWER MOSFET, 60 V, 3.7 M?, 127A
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 24A, 12V
Power Dissipation (Max): 3.7W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 122µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 30 V
на замовлення 142 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 336.22 грн |
| 10+ | 290.79 грн |
| 100+ | 238.28 грн |