Технічний опис NTBL048N60S5H ONN
Description: MOSFET - POWER,NCHANNEL, SUPERFE, Packaging: Bulk, Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 25A, 10V, Power Dissipation (Max): 297W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5.6mA, Supplier Device Package: 8-HPSOF, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5277 pF @ 400 V.
Інші пропозиції NTBL048N60S5H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NTBL048N60S5H | Виробник : onsemi |
Description: MOSFET - POWER,NCHANNEL, SUPERFEPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 25A, 10V Power Dissipation (Max): 297W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5.6mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5277 pF @ 400 V |
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