| Кількість | Ціна |
|---|---|
| 1+ | 650.28 грн |
| 10+ | 459.91 грн |
| 100+ | 340.00 грн |
| 500+ | 322.58 грн |
| 2000+ | 297.50 грн |
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Технічний опис NTBL082N65S3HF onsemi
Description: NTBL082N65S3HF, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: 8-HPSOF, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 313W (Tc), Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc).
Інші пропозиції NTBL082N65S3HF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NTBL082N65S3HF | Виробник : ONN |
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на замовлення 1940 шт: термін постачання 14-28 дні (днів) |
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NTBL082N65S3HF | Виробник : onsemi |
Description: NTBL082N65S3HF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
товару немає в наявності |
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NTBL082N65S3HF | Виробник : onsemi |
Description: NTBL082N65S3HF Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) |
товару немає в наявності |