NTBLS1D7N10MCTXG onsemi
на замовлення 1967 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 536.15 грн |
| 10+ | 393.11 грн |
| 100+ | 261.85 грн |
| 1000+ | 246.00 грн |
| 2000+ | 221.85 грн |
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Технічний опис NTBLS1D7N10MCTXG onsemi
Description: MOSFET, POWER, SINGLE N-CHANNEL,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V, Power Dissipation (Max): 3.4W (Ta), 295W (Tc), Vgs(th) (Max) @ Id: 4V @ 698µA, Supplier Device Package: 8-HPSOF, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V.
Інші пропозиції NTBLS1D7N10MCTXG за ціною від 232.83 грн до 588.54 грн
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NTBLS1D7N10MCTXG | Виробник : onsemi |
 Description: MOSFET, POWER, SINGLE N-CHANNEL,Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 295W (Tc) Vgs(th) (Max) @ Id: 4V @ 698µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V |
на замовлення 1930 шт: термін постачання 21-31 дні (днів) |
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| NTBLS1D7N10MCTXG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 147W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 115nC On-state resistance: 1.8mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 272A Pulsed drain current: 2137A кількість в упаковці: 2000 шт |
товару немає в наявності |
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NTBLS1D7N10MCTXG | Виробник : onsemi |
Description: MOSFET, POWER, SINGLE N-CHANNEL, Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 295W (Tc) Vgs(th) (Max) @ Id: 4V @ 698µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V |
товару немає в наявності |
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| NTBLS1D7N10MCTXG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 147W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 115nC On-state resistance: 1.8mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 272A Pulsed drain current: 2137A |
товару немає в наявності |