NTC080N120SC1 ON Semiconductor

Description: SIC MOS WAFER SALES 80MOHM 1200V, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V, Power Dissipation (Max): 178W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: Die, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 800 V.