NTD20N03L27-001 ONSEMI
Виробник: ONSEMI
Description: ONSEMI - NTD20N03L27-001 - MOSFET N-CH 30V 20A IPAK
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Технічний опис NTD20N03L27-001 ONSEMI
Description: MOSFET N-CH 30V 20A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.75W (Ta), 74W (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції NTD20N03L27-001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
NTD20N03L27-001 | onsemi |
Description: MOSFET N-CH 30V 20A IPAK Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.75W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 75 шт В кошику од. на суму грн. |
| NTD20N03L27-001 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 20A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.75W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 30V 20A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.75W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 75 шт
В кошику
од. на суму грн.