NTD20N06L-001 onsemi
Виробник: onsemi
Description: MOSFET N-CH 60V 20A IPAK
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.36W (Ta), 60W (Tj)
Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
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Технічний опис NTD20N06L-001 onsemi
Description: MOSFET N-CH 60V 20A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.36W (Ta), 60W (Tj), Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції NTD20N06L-001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
NTD20N06L-001 | onsemi |
Description: MOSFET N-CH 60V 20A IPAKInput Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.36W (Ta), 60W (Tj) Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| NTD20N06L-001 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 20A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.36W (Ta), 60W (Tj)
Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 60V 20A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.36W (Ta), 60W (Tj)
Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.


