Продукція > ONSEMI > NTD20N06L-001

NTD20N06L-001 onsemi


ntd20n06l-d.pdf
Виробник: onsemi
Description: MOSFET N-CH 60V 20A IPAK
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.36W (Ta), 60W (Tj)
Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
на замовлення 1851 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
443+45.61 грн
Мінімальне замовлення: 443 шт
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис NTD20N06L-001 onsemi

Description: MOSFET N-CH 60V 20A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.36W (Ta), 60W (Tj), Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.

Інші пропозиції NTD20N06L-001

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
NTD20N06L-001 NTD20N06L-001 onsemi ntd20n06l-d.pdf Description: MOSFET N-CH 60V 20A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.36W (Ta), 60W (Tj)
Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
NTD20N06L-001 ntd20n06l-d.pdf
Виробник: onsemi
Description: MOSFET N-CH 60V 20A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.36W (Ta), 60W (Tj)
Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.