NTD25P03L1G ON

Description: MOSFET P-CH 30V 25A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 75W (Tj), Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.