Технічний опис NTD25P03LT4 ON
Description: MOSFET P-CH 30V 25A DPAK, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 75W (Tj), Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V.
Інші пропозиції NTD25P03LT4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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NTD25P03LT4 | Виробник : onsemi |
Description: MOSFET P-CH 30V 25A DPAKSupplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V |
товару немає в наявності |

