NTD32N06L-001 onsemi
Виробник: onsemiDescription: MOSFET N-CH 60V 32A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 16A, 5V
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 4924 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1110+ | 17.81 грн |
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Технічний опис NTD32N06L-001 onsemi
Description: MOSFET N-CH 60V 32A IPAK, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 16A, 5V, Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V.
Інші пропозиції NTD32N06L-001 за ціною від 19.86 грн до 19.86 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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NTD32N06L-001 | Виробник : ONSEMI |
Description: ONSEMI - NTD32N06L-001 - MOSFET N-CH 60V 32A IPAK tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 4924 шт: термін постачання 21-31 дні (днів) |
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NTD32N06L-001 | Виробник : onsemi |
Description: MOSFET N-CH 60V 32A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 16A, 5V Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
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