на замовлення 9802 шт:
термін постачання 462-471 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 197.62 грн |
| 10+ | 163.47 грн |
| 25+ | 134.18 грн |
| 100+ | 114.92 грн |
| 250+ | 108.94 грн |
| 500+ | 101.63 грн |
| 1000+ | 87.02 грн |
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Технічний опис NTD360N80S3Z onsemi
Description: MOSFET N-CH 800V 13A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 6.5A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 300µA, Supplier Device Package: TO-252 (DPAK), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 400 V.
Інші пропозиції NTD360N80S3Z
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NTD360N80S3Z | Виробник : ON Semiconductor |
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на замовлення 2138 шт: термін постачання 14-28 дні (днів) |
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NTD360N80S3Z | Виробник : ON Semiconductor |
Trans MOSFET N-CH 800V 13A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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| NTD360N80S3Z | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.2A Pulsed drain current: 32.5A Power dissipation: 96W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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NTD360N80S3Z | Виробник : ON Semiconductor |
Trans MOSFET N-CH 800V 13A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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NTD360N80S3Z | Виробник : ON Semiconductor |
Trans MOSFET N-CH 800V 13A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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NTD360N80S3Z | Виробник : onsemi |
Description: MOSFET N-CH 800V 13A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 6.5A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 300µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 400 V |
товар відсутній |
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NTD360N80S3Z | Виробник : onsemi |
Description: MOSFET N-CH 800V 13A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 6.5A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 300µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 400 V |
товар відсутній |
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| NTD360N80S3Z | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.2A Pulsed drain current: 32.5A Power dissipation: 96W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |