Технічний опис NTD40N03RT4G ON
Description: MOSFET N-CH 25V 7.8A/32A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.5W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції NTD40N03RT4G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
NTD40N03RT4G | onsemi |
 Description: MOSFET N-CH 25V 7.8A/32A DPAKInput Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
NTD40N03RT4G | onsemi |
Description: MOSFET N-CH 25V 7.8A/32A DPAK Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NTD40N03RT4G | onsemi |
MOSFET 25V 45A N-Channel |
товару немає в наявності |
В кошику од. на суму грн. |
| NTD40N03RT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| NTD40N03RT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NTD40N03RT4G |
|
Виробник: onsemi
MOSFET 25V 45A N-Channel
MOSFET 25V 45A N-Channel
товару немає в наявності
В кошику
од. на суму грн.