Продукція > ONSEMI > NTD4806N-1G
NTD4806N-1G

NTD4806N-1G onsemi


ntd4806n-d.pdf Виробник: onsemi
Description: MOSFET N-CH 30V 11.3A/79A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
на замовлення 2850 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2850+7.22 грн
Мінімальне замовлення: 2850
Відгуки про товар
Написати відгук

Технічний опис NTD4806N-1G onsemi

Description: MOSFET N-CH 30V 11.3A/79A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V, Power Dissipation (Max): 1.4W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: I-PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V.

Інші пропозиції NTD4806N-1G

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
NTD4806N-1G NTD4806N-1G Виробник : onsemi ntd4806n-d.pdf Description: MOSFET N-CH 30V 11.3A/79A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
товар відсутній