NTD4855NT4G onsemi
Виробник: onsemi
Description: MOSFET N-CH 25V 14A/98A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
| Кількість | Ціна без ПДВ |
|---|---|
| 919+ | 24.82 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
919 шт
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Технічний опис NTD4855NT4G onsemi
Description: MOSFET N-CH 25V 14A/98A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції NTD4855NT4G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
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NTD4855NT4G | onsemi |
Description: MOSFET N-CH 25V 14A/98A DPAK Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| NTD4855NT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 14A/98A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 14A/98A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.