NTD4858NT4G onsemi
Виробник: onsemi
Description: MOSFET N-CH 25V 11.2A/73A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
| Кількість | Ціна |
|---|---|
| 807+ | 26.97 грн |
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Технічний опис NTD4858NT4G onsemi
Description: MOSFET N-CH 25V 11.2A/73A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції NTD4858NT4G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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NTD4858NT4G | Виробник : onsemi |
MOSFET NFET 25V 73A 0.0062R DPAK |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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| NTD4858NT4G | Виробник : ON |
0912+ TO-252 |
на замовлення 1335 шт: термін постачання 14-28 дні (днів) |
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NTD4858NT4G | Виробник : onsemi |
Description: MOSFET N-CH 25V 11.2A/73A DPAKInput Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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NTD4858NT4G | Виробник : onsemi |
Description: MOSFET N-CH 25V 11.2A/73A DPAKInput Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
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NTD4858NT4G | Виробник : UMW |
Description: MOSFET N-CH 25V 11.2A/73A DPAKPackaging: Tape & Reel (TR) |
товару немає в наявності |
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NTD4858NT4G | Виробник : UMW |
Description: MOSFET N-CH 25V 11.2A/73A DPAKPackaging: Cut Tape (CT) |
товару немає в наявності |

