NTD4860N-1G onsemi

Description: MOSFET N-CH 25V 10.4A/65A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.28W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.