NTD4860N-1G onsemi
Виробник: onsemi
Description: MOSFET N-CH 25V 10.4A/65A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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Технічний опис NTD4860N-1G onsemi
Description: MOSFET N-CH 25V 10.4A/65A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.28W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції NTD4860N-1G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
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NTD4860N-1G | onsemi |
Description: MOSFET N-CH 25V 10.4A/65A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 1.28W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. |
| NTD4860N-1G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 10.4A/65A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V
Description: MOSFET N-CH 25V 10.4A/65A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V
товару немає в наявності
В кошику
од. на суму грн.