NTD4865NT4G onsemi
Виробник: onsemiDescription: MOSFET N-CH 25V 8.5A/44A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.27W (Ta), 33.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 12 V
на замовлення 540000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1366+ | 16.15 грн |
Відгуки про товар
Написати відгук
Технічний опис NTD4865NT4G onsemi
Description: MOSFET N-CH 25V 8.5A/44A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 10.9mOhm @ 30A, 10V, Power Dissipation (Max): 1.27W (Ta), 33.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 12 V.
Інші пропозиції NTD4865NT4G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NTD4865NT4G |
|
на замовлення 1000 шт: термін постачання 14-28 дні (днів) |
|||
|
|
NTD4865NT4G | Виробник : onsemi |
Description: MOSFET N-CH 25V 8.5A/44A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 10.9mOhm @ 30A, 10V Power Dissipation (Max): 1.27W (Ta), 33.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 12 V |
товару немає в наявності |