NTD4906N-35G onsemi
Виробник: onsemi
Description: MOSFET N-CH 30V 10.3A/54A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
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Технічний опис NTD4906N-35G onsemi
Description: MOSFET N-CH 30V 10.3A/54A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.
Інші пропозиції NTD4906N-35G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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NTD4906N-35G | onsemi |
Description: MOSFET N-CH 30V 10.3A/54A IPAK Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| NTD4906N-35G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 10.3A/54A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Description: MOSFET N-CH 30V 10.3A/54A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.