на замовлення 14208 шт:
термін постачання 325-334 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 168.15 грн |
| 10+ | 149.26 грн |
| 100+ | 104.14 грн |
| 500+ | 86.02 грн |
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Технічний опис NTD5862NT4G onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 9, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 98A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.
Інші пропозиції NTD5862NT4G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NTD5862NT4G | Виробник : ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 69A; Idm: 335A; 115W; DPAK Case: DPAK Drain-source voltage: 60V Drain current: 69A On-state resistance: 4.4mΩ Type of transistor: N-MOSFET Power dissipation: 115W Polarisation: unipolar Kind of package: reel; tape Gate charge: 82nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 335A Mounting: SMD кількість в упаковці: 2500 шт |
товару немає в наявності |
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NTD5862NT4G | Виробник : onsemi |
Description: POWER FIELD-EFFECT TRANSISTOR, 9 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
товару немає в наявності |
|
| NTD5862NT4G | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 69A; Idm: 335A; 115W; DPAK Case: DPAK Drain-source voltage: 60V Drain current: 69A On-state resistance: 4.4mΩ Type of transistor: N-MOSFET Power dissipation: 115W Polarisation: unipolar Kind of package: reel; tape Gate charge: 82nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 335A Mounting: SMD |
товару немає в наявності |