NTDS015N15MCT4G onsemi
Виробник: onsemiDescription: MOSFET N-CH 150V 11A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 162µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V
на замовлення 2349 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.4 грн |
| 10+ | 111.4 грн |
| 100+ | 88.69 грн |
| 500+ | 70.43 грн |
| 1000+ | 59.76 грн |
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Технічний опис NTDS015N15MCT4G onsemi
Description: MOSFET N-CH 150V 11A/50A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V, Power Dissipation (Max): 3.8W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 162µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V.
Інші пропозиції NTDS015N15MCT4G за ціною від 63.7 грн до 160.42 грн
| Фото | Назва | Виробник | Інформація |
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NTDS015N15MCT4G | Виробник : onsemi |
MOSFET PTNG 150V 15MOHM DPAK |
на замовлення 2357 шт: термін постачання 21-30 дні (днів) |
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NTDS015N15MCT4G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 150V 11A 3-Pin(2+Tab) DPAK T/R |
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| NTDS015N15MCT4G | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 11A; Idm: 246A; 3.8W; DPAK Case: DPAK On-state resistance: 12.6mΩ Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 246A Drain-source voltage: 150V Drain current: 11A Type of transistor: N-MOSFET Power dissipation: 3.8W кількість в упаковці: 1 шт |
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NTDS015N15MCT4G | Виробник : onsemi |
Description: MOSFET N-CH 150V 11A/50A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V Power Dissipation (Max): 3.8W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 162µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V |
товар відсутній |
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| NTDS015N15MCT4G | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 11A; Idm: 246A; 3.8W; DPAK Case: DPAK On-state resistance: 12.6mΩ Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 246A Drain-source voltage: 150V Drain current: 11A Type of transistor: N-MOSFET Power dissipation: 3.8W |
товар відсутній |