NTDV20N06T4G-VF01 onsemi
Виробник: onsemi
Description: MOSFET N-CH 60V 20A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.88W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис NTDV20N06T4G-VF01 onsemi
Description: MOSFET N-CH 60V 20A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.88W (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції NTDV20N06T4G-VF01
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
NTDV20N06T4G-VF01 | onsemi |
 MOSFETs NFET DPAK 60V 20A 46MOHM |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
 |
NTDV20N06T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| NTDV20N06T4G-VF01 |
|
Виробник: onsemi
MOSFETs NFET DPAK 60V 20A 46MOHM
MOSFETs NFET DPAK 60V 20A 46MOHM
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NTDV20N06T4G-VF01 |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.