Технічний опис NTE128P NTE Electronics, Inc.
Description: TRANS NPN 80V 1A TO237, Packaging: Bag, Package / Case: TO-237AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 350mA, 2V, Frequency - Transition: 50MHz, Supplier Device Package: TO-237, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 850 mW.
Інші пропозиції NTE128P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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NTE128P | NTE Electronics, Inc |
 Description: TRANS NPN 80V 1A TO237Packaging: Bag Package / Case: TO-237AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 350mA, 2V Frequency - Transition: 50MHz Supplier Device Package: TO-237 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 850 mW |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NTE128P | NTE Electronics, Inc. |
Trans GP BJT NPN 80V 1A 3-Pin TO-237 |
товару немає в наявності |
В кошику од. на суму грн. |
| NTE128P |
|
Виробник: NTE Electronics, Inc
Description: TRANS NPN 80V 1A TO237
Packaging: Bag
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 350mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-237
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 850 mW
Description: TRANS NPN 80V 1A TO237
Packaging: Bag
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 350mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-237
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 850 mW
товару немає в наявності
В кошику
од. на суму грн.
| NTE128P |
|
Виробник: NTE Electronics, Inc.
Trans GP BJT NPN 80V 1A 3-Pin TO-237
Trans GP BJT NPN 80V 1A 3-Pin TO-237
товару немає в наявності
В кошику
од. на суму грн.