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NTE2355

NTE2355 NTE Electronics, Inc

nte2355.pdf
Виробник: NTE Electronics, Inc
Description: T-NPN SI W/10K RESISTOR
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 713 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
10+69.12 грн
20+63.19 грн
30+59.90 грн
40+53.06 грн
50+51.80 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
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Технічний опис NTE2355 NTE Electronics, Inc

Description: T-NPN SI W/10K RESISTOR, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 Short Body, Mounting Type: Through Hole, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Supplier Device Package: TO-92S, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 300 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms.