NTE2925 NTE Electronics
Виробник: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 45W; TO220F
Mounting: THT
Drain-source voltage: 800V
Drain current: 6A
On-state resistance: 1.35Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 18A
Case: TO220F
кількість в упаковці: 1 шт
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Технічний опис NTE2925 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 45W; TO220F, Mounting: THT, Drain-source voltage: 800V, Drain current: 6A, On-state resistance: 1.35Ω, Type of transistor: N-MOSFET, Power dissipation: 45W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 18A, Case: TO220F, кількість в упаковці: 1 шт.
Інші пропозиції NTE2925
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NTE2925 | Виробник : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 45W; TO220F Mounting: THT Drain-source voltage: 800V Drain current: 6A On-state resistance: 1.35Ω Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 18A Case: TO220F |
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