NTE2948 NTE Electronics
Виробник: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1A; Idm: 3A; 20W; TO251
Mounting: THT
Features of semiconductor devices: ESD protected gate
Case: TO251
Power dissipation: 20W
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhanced
Drain-source voltage: 400V
Type of transistor: N-MOSFET
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Pulsed drain current: 3A
кількість в упаковці: 1 шт
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Технічний опис NTE2948 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 400V; 1A; Idm: 3A; 20W; TO251, Mounting: THT, Features of semiconductor devices: ESD protected gate, Case: TO251, Power dissipation: 20W, Polarisation: unipolar, Drain current: 1A, Kind of channel: enhanced, Drain-source voltage: 400V, Type of transistor: N-MOSFET, On-state resistance: 4.2Ω, Gate-source voltage: ±30V, Pulsed drain current: 3A, кількість в упаковці: 1 шт.
Інші пропозиції NTE2948
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NTE2948 | Виробник : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1A; Idm: 3A; 20W; TO251 Mounting: THT Features of semiconductor devices: ESD protected gate Case: TO251 Power dissipation: 20W Polarisation: unipolar Drain current: 1A Kind of channel: enhanced Drain-source voltage: 400V Type of transistor: N-MOSFET On-state resistance: 4.2Ω Gate-source voltage: ±30V Pulsed drain current: 3A |
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