NTE2987 NTE Electronics, Inc

Description: MOSFET N-CH 100V 20A TO220, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A, Rds On (Max) @ Id, Vgs: 120mOhm @ 10A, 5V, FET Feature: Logic Level Gate, 4V Drive, Power Dissipation (Max): 105W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V.