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NTE519

NTE519 NTE Electronics, Inc

nte519.pdf
Виробник: NTE Electronics, Inc
Description: DIODE GEN PURP 100V 150MA DO35
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 200°C (Max)
Supplier Device Package: DO-35
Current - Average Rectified (Io): 150mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 8 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bag
на замовлення 2492 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
10+47.58 грн
20+43.52 грн
30+41.23 грн
40+36.55 грн
50+35.69 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
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Технічний опис NTE519 NTE Electronics, Inc

Description: DIODE GEN PURP 100V 150MA DO35, Current - Reverse Leakage @ Vr: 5 µA @ 75 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: 200°C (Max), Supplier Device Package: DO-35, Current - Average Rectified (Io): 150mA, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 8 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Bag.