NTF2955T1G-EV EVVO
Виробник: EVVO
Description: MOSFET P-CH 60V 7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223-3L
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 10.4W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 3+ | 106.40 грн |
| 10+ | 64.56 грн |
| 100+ | 43.04 грн |
| 500+ | 31.73 грн |
| 1000+ | 28.94 грн |
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Технічний опис NTF2955T1G-EV EVVO
Description: MOSFET P-CH 60V 7A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-223-3L, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 10.4W (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції NTF2955T1G-EV
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
NTF2955T1G-EV | Виробник : EVVO |
Description: MOSFET P-CH 60V 7A SOT223Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-223-3L Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.1W (Ta), 10.4W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
товару немає в наявності |