NTGS1135PT1G onsemi
Виробник: onsemiDescription: MOSFET P-CH 8V 4.6A 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 970mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 6 V
на замовлення 17380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1025+ | 21.97 грн |
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Технічний опис NTGS1135PT1G onsemi
Description: MOSFET P-CH 8V 4.6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 4.5V, Power Dissipation (Max): 970mW (Ta), Vgs(th) (Max) @ Id: 850mV @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 6 V.
Інші пропозиції NTGS1135PT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NTGS1135PT1G | Виробник : onsemi |
Description: MOSFET P-CH 8V 4.6A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 4.5V Power Dissipation (Max): 970mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 6 V |
товару немає в наявності |