на замовлення 1999 шт:
термін постачання 350-359 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.61 грн |
| 10+ | 32.48 грн |
| 100+ | 23.1 грн |
| 500+ | 19.49 грн |
| 1000+ | 16.89 грн |
| 3000+ | 15.56 грн |
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Технічний опис NTGS3433T1G onsemi
Description: MOSFET P-CH 12V 2.35A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V.
Інші пропозиції NTGS3433T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NTGS3433T1G |
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на замовлення 45000 шт: термін постачання 14-28 дні (днів) |
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| NTGS3433T1G | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.35A Pulsed drain current: -14A Power dissipation: 1W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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NTGS3433T1G | Виробник : ON Semiconductor |
Trans MOSFET P-CH 12V 3.3A 6-Pin TSOP T/R |
товар відсутній |
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NTGS3433T1G | Виробник : ON Semiconductor |
Trans MOSFET P-CH 12V 3.3A 6-Pin TSOP T/R |
товар відсутній |
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NTGS3433T1G | Виробник : onsemi |
Description: MOSFET P-CH 12V 2.35A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V |
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NTGS3433T1G | Виробник : onsemi |
Description: MOSFET P-CH 12V 2.35A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V |
товар відсутній |
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| NTGS3433T1G | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.35A Pulsed drain current: -14A Power dissipation: 1W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |