NTH4L032N065M3S onsemi

Description: SIC MOS TO247-4L 32MOHM 650V M3S, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 4V @ 7.5mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V.