Технічний опис NTH4L067N65S3H ON Semiconductor
Description: SUPERFET3 FAST 67MOHM TO-247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V, Power Dissipation (Max): 266W (Tc), Vgs(th) (Max) @ Id: 4V @ 3.9mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V.
Інші пропозиції NTH4L067N65S3H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NTH4L067N65S3H | Виробник : ONSEMI |
 NTH4L067N65S3H THT N channel transistors |
товару немає в наявності |
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NTH4L067N65S3H | Виробник : onsemi |
Description: SUPERFET3 FAST 67MOHM TO-247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4V @ 3.9mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V |
товару немає в наявності |
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NTH4L067N65S3H | Виробник : onsemi |
MOSFETs Power MOSFET, N-Channel, SUPERFET III, FAST, 650 V, 40 A, 67 mohm, TO-247 4lead |
товару немає в наявності |