Технічний опис NTH4L075N065SC1 onsemi
Description: ONSEMI - NTH4L075N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 38 A, 650 V, 0.057 ohm, TO-247, tariffCode: 85412900, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 38A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.8V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 148W, Bauform - Transistor: TO-247, Anzahl der Pins: 4Pin(s), Produktpalette: EliteSiC Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.057ohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції NTH4L075N065SC1 за ціною від 265.88 грн до 756.31 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NTH4L075N065SC1 | onsemi |
 Description: SILICON CARBIDE (SIC) MOSFET - 5Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V |
на замовлення 414 шт: термін постачання 21-31 дні (днів) |
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| NTH4L075N065SC1 | ONSEMI |
Description: ONSEMI - NTH4L075N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 38 A, 650 V, 0.057 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 38A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 148W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: EliteSiC Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.057ohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 246 шт: термін постачання 21-31 дні (днів) |
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| NTH4L075N065SC1 |
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Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 5
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V
Description: SILICON CARBIDE (SIC) MOSFET - 5
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V
на замовлення 414 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 756.31 грн |
| 30+ | 433.12 грн |
| 120+ | 368.39 грн |
| NTH4L075N065SC1 |
|
Виробник: ONSEMI
Description: ONSEMI - NTH4L075N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 38 A, 650 V, 0.057 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 38A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 148W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.057ohm
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - NTH4L075N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 38 A, 650 V, 0.057 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 38A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 148W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.057ohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 246 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 448.41 грн |
| 5+ | 385.73 грн |
| 10+ | 323.05 грн |
| 50+ | 294.01 грн |
| 100+ | 265.88 грн |