NTHC5513T1 ON

Description: MOSFET N/P-CH 20V CHIPFET, Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: ChipFET™, Vgs(th) (Max) @ Id: 1.2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V.