Технічний опис NTHD2102PT1G ON
Description: MOSFET 2P-CH 8V 3.4A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V, Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: ChipFET™.
Інші пропозиції NTHD2102PT1G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
NTHD2102PT1G | onsemi |
Description: MOSFET 2P-CH 8V 3.4A CHIPFETPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3.4A Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: ChipFET™ |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
NTHD2102PT1G | onsemi |
MOSFET -8V -4.6A P-Channel |
товару немає в наявності |
В кошику од. на суму грн. |
| NTHD2102PT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2P-CH 8V 3.4A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Description: MOSFET 2P-CH 8V 3.4A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
товару немає в наявності
В кошику
од. на суму грн.
| NTHD2102PT1G |
![]() |
Виробник: onsemi
MOSFET -8V -4.6A P-Channel
MOSFET -8V -4.6A P-Channel
товару немає в наявності
В кошику
од. на суму грн.



