NTHD2110TT1G onsemi

Description: MOSFET P-CH 12V 4.5A CHIPFET, Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Obsolete, Supplier Device Package: ChipFET™, Vgs(th) (Max) @ Id: 850mV @ 250µA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).