на замовлення 2950 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 103.85 грн |
| 10+ | 91.67 грн |
| 100+ | 62.51 грн |
| 500+ | 51.61 грн |
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Технічний опис NTHD4502NT1G onsemi
Description: MOSFET 2N-CH 30V 2.2A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 640mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.2A, Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V, Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: ChipFET™.
Інші пропозиції NTHD4502NT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| NTHD4502NT1G |
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на замовлення 31450 шт: термін постачання 14-28 дні (днів) |
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| NTHD4502NT1G | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2/2.9A; Idm: 16÷12.6A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2/2.9A Pulsed drain current: 16...12.6A Power dissipation: 0.6W Case: ChipFET Gate-source voltage: ±8/±8V On-state resistance: 37/83mΩ Mounting: SMD Gate charge: 5.8/6.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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NTHD4502NT1G | Виробник : onsemi |
Description: MOSFET 2N-CH 30V 2.2A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 640mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: ChipFET™ |
товар відсутній |
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NTHD4502NT1G | Виробник : onsemi |
Description: MOSFET 2N-CH 30V 2.2A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 640mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: ChipFET™ |
товар відсутній |
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| NTHD4502NT1G | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2/2.9A; Idm: 16÷12.6A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2/2.9A Pulsed drain current: 16...12.6A Power dissipation: 0.6W Case: ChipFET Gate-source voltage: ±8/±8V On-state resistance: 37/83mΩ Mounting: SMD Gate charge: 5.8/6.6nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |