NTHS4111PT1G onsemi

Description: MOSFET P-CH 30V 3.3A CHIPFET, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 24 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: ChipFET™, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).