NTHS5402T1 onsemi

Description: MOSFET N-CH 30V 4.9A CHIPFET, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: ChipFET™, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).