NTHS5445T1 onsemi

Description: MOSFET P-CH 8V 5.2A CHIPFET, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Drain to Source Voltage (Vdss): 8 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: ChipFET™, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 5.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).