Відгуки про товар
Написати відгук
Технічний опис NTLJS4D9N03HTAG onsemi
Description: MOSFET N-CH 30V 9.5A 6PQFN, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Supplier Device Package: 6-PQFN (2x2), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 860mW (Ta), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerWDFN, Packaging: Tape & Reel (TR).
Інші пропозиції NTLJS4D9N03HTAG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
NTLJS4D9N03HTAG | onsemi |
Description: MOSFET N-CH 30V 9.5A 6PQFN Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
|
NTLJS4D9N03HTAG | onsemi |
Description: MOSFET N-CH 30V 9.5A 6PQFN Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NTLJS4D9N03HTAG | ONSEMI |
 Description: ONSEMI - NTLJS4D9N03HTAG - MOSFET, POWER, 30V, N-CHANNEL, WDFN6MSL: MSL 1 - unbegrenzt SVHC: Lead (17-Jan-2022) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| NTLJS4D9N03HTAG |
Виробник: onsemi
Description: MOSFET N-CH 30V 9.5A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 9.5A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTLJS4D9N03HTAG |
Виробник: onsemi
Description: MOSFET N-CH 30V 9.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Description: MOSFET N-CH 30V 9.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| NTLJS4D9N03HTAG |
|
Виробник: ONSEMI
Description: ONSEMI - NTLJS4D9N03HTAG - MOSFET, POWER, 30V, N-CHANNEL, WDFN6
MSL: MSL 1 - unbegrenzt
SVHC: Lead (17-Jan-2022)
Description: ONSEMI - NTLJS4D9N03HTAG - MOSFET, POWER, 30V, N-CHANNEL, WDFN6
MSL: MSL 1 - unbegrenzt
SVHC: Lead (17-Jan-2022)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.