на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 119.10 грн |
| 10+ | 74.12 грн |
| 100+ | 42.89 грн |
| 500+ | 33.52 грн |
| 1000+ | 30.25 грн |
| 3000+ | 27.66 грн |
| 6000+ | 24.38 грн |
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Технічний опис NTLJS4D9N03HTAG onsemi
Description: MOSFET N-CH 30V 9.5A 6PQFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V, Power Dissipation (Max): 860mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 6-PQFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V.
Інші пропозиції NTLJS4D9N03HTAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NTLJS4D9N03HTAG | Виробник : onsemi |
Description: MOSFET N-CH 30V 9.5A 6PQFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V |
товару немає в наявності |
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NTLJS4D9N03HTAG | Виробник : onsemi |
Description: MOSFET N-CH 30V 9.5A 6PQFN Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V |
товару немає в наявності |