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Технічний опис NTLJS5D0N03CTAG onsemi
Description: MOSFET N-CH 30V 11.2A 6PQFN, Power Dissipation (Max): 860mW (Ta), Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 6-PQFN (2x2), Vgs(th) (Max) @ Id: 2.2V @ 250µA.
Інші пропозиції NTLJS5D0N03CTAG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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NTLJS5D0N03CTAG | onsemi |
 Description: MOSFET N-CH 30V 11.2A 6PQFNPower Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 2.2V @ 250µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
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NTLJS5D0N03CTAG | onsemi |
Description: MOSFET N-CH 30V 11.2A 6PQFN Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NTLJS5D0N03CTAG | ONSEMI |
Description: ONSEMI - NTLJS5D0N03CTAG - MOSFET, POWER, 30V, N-CHANNEL, WDFN6 MSL: MSL 1 - unbegrenzt SVHC: Lead (10-Jun-2022) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| NTLJS5D0N03CTAG | ON Semiconductor |
30 V Single N Channel Power MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| NTLJS5D0N03CTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 11.2A 6PQFN
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Description: MOSFET N-CH 30V 11.2A 6PQFN
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTLJS5D0N03CTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 11.2A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11.2A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NTLJS5D0N03CTAG |
|
Виробник: ONSEMI
Description: ONSEMI - NTLJS5D0N03CTAG - MOSFET, POWER, 30V, N-CHANNEL, WDFN6
MSL: MSL 1 - unbegrenzt
SVHC: Lead (10-Jun-2022)
Description: ONSEMI - NTLJS5D0N03CTAG - MOSFET, POWER, 30V, N-CHANNEL, WDFN6
MSL: MSL 1 - unbegrenzt
SVHC: Lead (10-Jun-2022)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTLJS5D0N03CTAG |
|
Виробник: ON Semiconductor
30 V Single N Channel Power MOSFET
30 V Single N Channel Power MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.