NTMC1300R2 onsemi
Виробник: onsemiDescription: MOSFET N/P-CH 30V 2.2A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.2A, 1.8A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1110+ | 17.91 грн |
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Технічний опис NTMC1300R2 onsemi
Description: MOSFET N/P-CH 30V 2.2A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.2A, 1.8A, Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V, Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC.
Інші пропозиції NTMC1300R2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NTMC1300R2 |
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на замовлення 20000 шт: термін постачання 14-28 дні (днів) |
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NTMC1300R2 | Виробник : onsemi |
Description: MOSFET N/P-CH 30V 2.2A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A, 1.8A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC |
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